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2SK2854

Part No 2SK2854
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description N CHANNEL MOS TYPE (UHF BAND AMPLIFIER APPLICATIONS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1127396-2SK2854
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2854 CAD Model

Description

The 2SK2854 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Toshiba Semiconductor and Storage, designed for RF (Radio Frequency) applications. This transistor is commonly used in high-frequency amplifiers, oscillators, and switches found in communication systems and other RF equipment.

Applications

  • RF Amplifiers
  • Oscillators in RF circuits
  • RF Switches
  • VHF/UHF communication equipment
  • Wireless communication devices

Features

  • N-Channel MOSFET: Provides efficient amplification and switching capabilities.
  • High Transition Frequency (fT): Enables excellent performance at high frequencies.
  • Low Input Capacitance: Minimizes signal loading and improves high-frequency response.
  • High Power Gain: Provides significant signal amplification.
  • Small Package Size: Allows for compact circuit designs.

Benefits

  • Improved RF Performance: Delivers enhanced signal amplification and switching in high-frequency applications.
  • Increased Circuit Efficiency: Minimizes power consumption in RF circuits.
  • Reduced Signal Loss: Optimizes signal transmission and reception.
  • Compact Design: Enables miniaturization of RF equipment.
  • Enhanced Reliability: Ensures stable and consistent performance in demanding RF environments.

Additional Details

The 2SK2854's key specifications typically include its drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), power dissipation, and transition frequency (fT). The transition frequency (fT) is a critical parameter for RF applications, indicating the frequency at which the transistor's gain drops to unity. Input and output capacitance values are also important for impedance matching and circuit design.

The MOSFET is usually housed in a small outline package (SOT) or similar, designed for surface mounting on printed circuit boards. Proper biasing is essential for optimal performance and linearity in RF amplifier applications. Impedance matching networks are typically required to maximize power transfer and minimize signal reflections. An external heatsink may be required depending on the application and power dissipation.

Careful attention should be paid to thermal management to prevent overheating and ensure long-term reliability. Consult the manufacturer's datasheet for detailed electrical characteristics, application notes, and recommended operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,900 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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