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Same model may have multiple batches, images only for reference.
2SK3700(F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SK3700(F)

Part No 2SK3700(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5A TO3P / N-Channel 900 V 5A (Ta) 150W (Tc) Through Hole TO-3P(N)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
Base Product Number 2SK3700
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1037747-2SK3700(F)
Ultra Librarian 3D Model Ultra Librarian 2SK3700(F) CAD Model

Description

This electronic component is a N-Channel MOSFET (Metal Oxide) manufactured by Toshiba Semiconductor and Storage.

  • Maximum Drain to Source Voltage: 900 V
  • Continuous Drain Current: 5A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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Quantity Unit Price Ext. Price
35+ $1.8577 $65.0195
80+ $1.5244 $121.9520
120+ $1.4767 $177.2040
165+ $1.4291 $235.8015
210+ $1.3814 $290.0940
280+ $1.2385 $346.7800
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