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Same model may have multiple batches, images only for reference.
K14A55D Real Image
Same model may have multiple batches, images only for reference.

K14A55D

Part No K14A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 14A TO-220SIS
Datasheet
K14A55D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 370 mOhm @ 7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070339-K14A55D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K14A55D CAD Model

Description

The supply and demand status is balanced for this product. It is a MOSFET technology-based component with a maximum power dissipation of 50W.

  • Mounting: through-hole
  • Case/Package: TO-220SIS
  • Drain-Source Breakdown Voltage: 550V
  • Continuous Drain Current @ 25°C: 14A
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Rds On @ Id,Vgs: 370 mOhm @ 7A, 10V
  • Versatile component: can be used in various electronic devices.

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