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Same model may have multiple batches, images only for reference.
RN1109MFV,L3F
Same model may have multiple batches, images only for reference.

RN1109MFV,L3F

Part No RN1109MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 500NA VESM
Datasheet
RN1109MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package VESM
Win Source Part Number 1092455-RN1109MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1109MFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage RN1109MFV,L3F is an NPN pre-biased transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Base Resistor (R1): 47k ohms
  • Emitter Base Resistor (R2): 22k ohms
  • Typical Gain (hFE): 70 @ 10mA, 5V
  • Application: General-Purpose
  • Maximum Power Dissipation: 150mW
  • Collector Cut-off Current: 500nA
  • Case/Package: VESM
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5313 $58.4430
265+ $0.4366 $115.6990
410+ $0.4227 $173.3070
565+ $0.4089 $231.0285
735+ $0.3950 $290.3250
980+ $0.3546 $347.5080
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Availability: 241,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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