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Same model may have multiple batches, images only for reference.
RN1965FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1965FE(TE85L,F)

Part No RN1965FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN1965FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092483-RN1965FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1965FE(TE85L,F) CAD Model

Description

This electronic component, manufactured by Toshiba Semiconductor and Storage, is a transistor with a frequency transition of 250MHz.

  • Frequency Transition: 250MHz
  • Transistor Polarity: PNP
  • Pre-Biased: Yes
  • Base Resistor: 2.2k
  • Emitter Base Resistor: 47k
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Case/Package: ES6
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA and 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA and 5V
  • Maximum Power Dissipation: 100mW
  • Supply and Demand Status: Sufficient

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