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Same model may have multiple batches, images only for reference.
TPCP8203(TE85L,F)
Same model may have multiple batches, images only for reference.

TPCP8203(TE85L,F)

Part No TPCP8203(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 4.7A PS-8
Datasheet
TPCP8203(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.7A
Gate-Source Threshold Voltage 2.5V @ 1mA
Maximum Power Dissipation 360mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PS-8 (2.9x2.4)
Win Source Part Number 1111142-TPCP8203(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCP8203(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 1111142-TPCP8203(TE85L,F) is a 2 N-Channel (Dual) FET that is now obsolete.

  • Package: PS-8 (2.9x2.4)
  • Power Dissipation: 360mW
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 4.7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • FET Type: Standard
  • Category: Discrete Semiconductor Products
  • Supply and Demand: Sufficient

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