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Same model may have multiple batches, images only for reference.
RN2605(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2605(TE85L,F)

Part No RN2605(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SM6 / Trans Digital BJT PNP 50V 100mA 300mW 6-Pin SM T/R
Datasheet
RN2605(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 300mW
Mounting SMD
Package SC-74, SOT-457
Manufacturer Package SM6
Win Source Part Number 793308-RN2605(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Family Name RN2605
Introduction Date June 05, 2001
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian RN2605(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2605(TE85L,F) is a dual PNP pre-biased transistor.

  • Transition Frequency: 200MHz
  • Current Gain: 80 @ 10mA, 5V
  • Collector-Emitter Breakdown Voltage: 50V
  • Package Size: SC-74, SOT-457
  • Mounting: SMD
  • RoHS Compliance: Yes
  • Country of Origin: Japan

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0349 $62.0940
140+ $0.8501 $119.0140
215+ $0.8235 $177.0525
290+ $0.7970 $231.1300
375+ $0.7704 $288.9000
505+ $0.6907 $348.8035
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Availability: 1,790 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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