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Same model may have multiple batches, images only for reference.
RN2970FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2970FE(TE85L,F)

Part No RN2970FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2970FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 122847-RN2970FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2970FE(TE85L,F) CAD Model

Description

The RN2970FE(TE85L,F) is a dual PNP pre-biased transistor that is manufactured by Toshiba Semiconductor and Storage.

  • Status: Obsolete product with a medium popularity and a balanced supply and demand status.
  • Application: Designed for use in various applications such as amplifiers, switching, and voltage regulation.
  • Maximum Power Dissipation: 100mW
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 120 @ 1mA, 5V
  • Collector Cut-Off Current (Max): 100nA (ICBO)

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