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Same model may have multiple batches, images only for reference.
RN2971FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2971FE(TE85L,F)

Part No RN2971FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2971FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 099299-RN2971FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2971FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2971FE(TE85L,F) is a Discrete Semiconductor Product that has a maximum current collector of 100mA and a maximum collector-emitter breakdown voltage of 50V.

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Frequency Transition: 200MHz
  • Mounting Technology: Surface Mount Technology (SMT)
  • Case/Package: ES6
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Maximum Power Dissipation: 100mW
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Win Source Part Number: 099299-RN2971FE(TE85L,F)

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