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Same model may have multiple batches, images only for reference.
RN4604(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4604(TE85L,F)

Part No RN4604(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.3W SM6
Datasheet
RN4604(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 109243-RN4604(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4604(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN4604(TE85L,F) is a dual pre-biased NPN and PNP transistor in a SM6 package.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 250MHz
  • Typical Minimum Gain (hFE): 80 @ 10mA and 5V
  • Base Resistor (R1): 47k ohms
  • Emitter Base Resistor (R2): 47k ohms
  • Maximum Power Dissipation: 300mW
  • Collector Cut-Off Current (max): 100nA (ICBO)
  • Vce (sat): Low, 300mV @ 250μA and 5mA
  • Application: Ideal for use in discrete semiconductor products.

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