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Same model may have multiple batches, images only for reference.
SSM3J114TU(T5L,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J114TU(T5L,T)

Part No SSM3J114TU(T5L,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.8A UFM
Datasheet
SSM3J114TU(T5L,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 7.7nC @ 4V
Max Input Capacitance 331pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 149 mOhm @ 600mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 1102285-SSM3J114TU(T5L,T)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J114TU(T5L,T) CAD Model

Description

The SSM3J114TU(T5L,T) is a P-channel MOSFET. Manufactured by Toshiba Semiconductor and Storage

  • Maximum Power Dissipation @ Ta: 500mW
  • Continuous Drain Current @ 25°C: 1.8A
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ 600mA and 4V: 149 mOhm
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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