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Same model may have multiple batches, images only for reference.
SSM3K16CT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

SSM3K16CT(TPL3)

Part No SSM3K16CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.1A CST3 S-MOS
Datasheet
SSM3K16CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 1.1V @ 100μA
Max Input Capacitance 9.3pF @ 3V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST3
Dimension SC-101, SOT-883
Win Source Part Number 105190-SSM3K16CT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K16CT(TPL3) CAD Model

Description

The SSM3K16CT(TPL3) is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Power Dissipation: 100mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100mA @ 25°C
  • Gate-Source Threshold Voltage: 1.1V @ 100μA
  • Maximum Input Capacitance: 9.3pF @ 3V
  • Maximum Gate-Source Voltage: ±10V
  • Package: CST3
  • Dimensions: SC-101 and SOT-883
  • Alternative cross-reference part number: SSM3K16CT, RV2C002UNT2CL, and RV2C002UNT2L
  • Category: discrete semiconductor product
  • Popularity: medium
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
795+ $0.0728 $57.8760
1,965+ $0.0589 $115.7385
3,000+ $0.0578 $173.4000
4,170+ $0.0554 $231.0180
5,320+ $0.0543 $288.8760
7,145+ $0.0485 $346.5325
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Availability: 10,000 pieces
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