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Same model may have multiple batches, images only for reference.
SSM3K335R,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K335R,LF

Part No SSM3K335R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 30V 6A SOT-23F
Datasheet
SSM3K335R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 2.7nC @ 4.5V
Max Input Capacitance 340pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 38 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102299-SSM3K335R,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K335R,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K335R,LF is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 6A (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6A (Ta)
  • Temperature Range: 150°C (TJ)
  • Package: reel - TR
  • Mounting: SMD (SMT)
  • Case/Package: SOT-23F with SOT-23-3 flat leads
  • HTSUS Code: 8541.29.00

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.0903 $50.1165
1,185+ $0.0846 $100.2510
1,835+ $0.0818 $150.1030
2,635+ $0.0760 $200.2600
3,420+ $0.0732 $250.3440
4,270+ $0.0703 $300.1810
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Availability: 41,843 pieces
MOQ: 555 pcs
Order Increment : 1 pcs
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