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Same model may have multiple batches, images only for reference.
SSM3K36TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K36TU,LF

Part No SSM3K36TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 5V
Rds On (Max) @ Id, Vgs 630mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.23 nC @ 4 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 10 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3K36
Other Names SSM3K36TULFTR,SSM3K36TULFCT,SSM3K36TULFDKR,SSM3K36TU,LF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277961-SSM3K36TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K36TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K36TU,LF is an N-channel MOSFET transistor with a drain to source voltage of 20 V.

  • Continuous Drain Current: 500 mA @ 25°C
  • Rds On (Max): 630mOhm @ 200mA, 5V
  • Vgs(th) (Max): 1V @ 1mA
  • Package: UFM
  • Standard Package: 3,000 units
  • Mounting: Surface mount technology
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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