The Toshiba Semiconductor and Storage SSM3K56MFV,L3F is an N-Channel MOSFET that comes in a VESM package and has a drain-source breakdown voltage of 20V.

• Channel Type: N-Channel
• Package: VESM
• Drain-Source Breakdown Voltage: 20V
• Maximum Rds On @ Id,Vgs: 235 mOhm @ 800mA, 4.5V
• Maximum Gate-Source Voltage: ±8V
• Continuous Drain Current: 800mA (Ta)
• Gate-Source Threshold Voltage: 1V @ 1mA
• Maximum Gate Charge: 1nC @ 4.5V
• Maximum Input Capacitance: 55pF @ 10V
• Power Dissipation: 150mW (Ta)
• Drive Voltage: Up to 1.5V, 4.5V (Max Rds On, Min Rds On)