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Same model may have multiple batches, images only for reference.
SSM3K72KFS,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K72KFS,LF

Part No SSM3K72KFS,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII-H
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
Power Dissipation (Max) 150mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package SSM
Package / Case SC-75, SOT-416
Base Product Number SSM3K72
Other Names SSM3K72KFSLFTR,SSM3K72KFSLFCT,SSM3K72KFS,LF(B,SSM3K72KFSLFDKR,SSM3K72KFS,LF(T,SSM3K72KFSLF,SSM3K72KFSLF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277939-SSM3K72KFS,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K72KFS,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K72KFS,LF is a N-channel MOSFET transistor with a drain to source voltage (Vdss) of 60 V.

  • Maximum Continuous Drain Current (Id): 300mA (Ta)
  • Maximum On-Resistance (Rds On): 1.5Ohm @ 100mA, 10V
  • Gate Charge (Qg): 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss): 40 pF @ 10 V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: 150°C

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