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Same model may have multiple batches, images only for reference.
SSM6N40TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N40TU,LF

Part No SSM6N40TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Rds On (Max) @ Id, Vgs 122mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6N40
Other Names SSM6N40TU,LF(B,SSM6N40TULFCT,SSM6N40TULFDKR,SSM6N40TULFTR
Standard Package 3,000
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278547-SSM6N40TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6N40TU,LF CAD Model

Description

The SSM6N40TU,LF is a dual N-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 1.6A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Maximum Power Dissipation: 500mW (Ta)
  • Operating Temperature Range: 150°C

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