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Same model may have multiple batches, images only for reference.
SSM6N55NU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N55NU,LF

Part No SSM6N55NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4A UDFN6
Datasheet
SSM6N55NU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 46 mOhm @ 4A, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 280pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-μDFN(2x2)
Win Source Part Number 193180-SSM6N55NU,LF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSM6N55NU,LF CAD Model

Description

The SSM6N55NU,LF is a dual N-channel logic level gate FET manufactured by Toshiba Semiconductor and Storage.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Maximum Gate Charge: 2.5nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 46 mOhm @ 4A, 10V
  • Description: a popular choice for discrete semiconductor products and is commonly used in various applications.
  • Package: 6-μDFN(2x2)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 4,371 pieces
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