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Same model may have multiple batches, images only for reference.
SSM6P36TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P36TU,LF

Part No SSM6P36TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 330mA (Ta)
Rds On (Max) @ Id, Vgs 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
Power - Max 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package UF6
Base Product Number SSM6P36
Other Names SSM6P36TULFTR,SSM6P36TULFCT,SSM6P36TULFDKR,SSM6P36TU,LF(T,SSM6P36TU,LF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278540-SSM6P36TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6P36TU,LF CAD Model

Description

The product with Id 1048271 is a transistor MOSFET array.

  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Power - Max: 500mW (Ta)
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Temperature Range - Operating: 150°C

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