The TC551402J-25 is a high-speed, low-power 4,194,304-bit static RAM (SRAM) manufactured by Toshiba. This SRAM is organized as 524,288 words by 8 bits. It is designed for applications requiring fast access times and low power consumption. It operates from a single 3.3V power supply.

Applications

• High-speed cache memory
• Buffer memory
• Workstations
• Industrial control systems
• Telecommunications equipment

Features

• High-speed access time: 25 ns
• Low power consumption: Operating current of 120 mA (typical)
• Single 3.3V power supply operation
• TTL compatible inputs and outputs
• Three-state outputs
• Package: 32-pin SOJ

Benefits

• Fast access times allow for rapid data retrieval and processing, improving system performance.
• Low power consumption reduces overall system power requirements and extends battery life in portable applications.
• TTL compatibility simplifies interfacing with other digital logic circuits.
• The three-state outputs allow for easy memory expansion and bus sharing.
• The SOJ package is well-suited for surface mount assembly.

Additional Details

The TC551402J-25 utilizes CMOS technology to achieve its high speed and low power characteristics. It features fully static operation, eliminating the need for refresh cycles. The device also incorporates address latches and output enable control for simplified system integration. The operating temperature range is typically 0°C to 70°C.

Detailed specifications include Input Low Voltage (VIL) max of 0.8V, Input High Voltage (VIH) min of 2.0V, Output Low Voltage (VOL) max of 0.4V and Output High Voltage (VOH) min of 2.4V. Capacitance characteristics are typically Input Capacitance (CIN) of 5pF and Output Capacitance (COUT) of 7pF.