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TK12A60U(Q,M)

Part No TK12A60U(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 720pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1107402-TK12A60U(Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12A60U(Q,M) CAD Model

Description

The TK12A60U(Q,M) is a 600V, 12A N-channel MOSFET from Toshiba Semiconductor and Storage. This power MOSFET is designed for high-efficiency switching applications and features a low on-resistance (RDS(on)), contributing to reduced power losses and improved thermal performance. Its robust design makes it suitable for use in a variety of power supply and motor control systems.

Applications:

  • Switching power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Motor control applications
  • DC-DC converters
  • Inverters

Features:

  • N-channel MOSFET
  • 600V Drain-Source Voltage (VDS)
  • 12A Continuous Drain Current (ID)
  • Low On-Resistance (RDS(on))
  • High-speed switching
  • Easy to use and parallel

Benefits:

  • High efficiency due to low RDS(on), reducing power loss
  • Improved thermal performance, enhancing reliability
  • Simplified design with easy paralleling capability
  • Suitable for high-frequency switching applications
  • Robust and reliable performance

Additional Details:

The TK12A60U(Q,M) boasts a low on-resistance, which minimizes conduction losses, leading to higher overall efficiency in power conversion systems. The MOSFET is designed to handle significant power levels, making it suitable for demanding applications. Its fast switching speed reduces switching losses, further enhancing efficiency. The device is designed for ease of use and can be easily paralleled, which is advantageous in high-current applications. The MOSFET’s body diode is optimized for fast recovery, further contributing to its excellent switching performance. The gate charge is relatively low, which contributes to reduced switching losses and improved efficiency. The operating temperature range is typically -55°C to +150°C, providing a wide margin for various environmental conditions.

Toshiba's TK12A60U(Q,M) N-channel MOSFET offers a compelling combination of high voltage and current handling capabilities, low on-resistance, and fast switching speeds. This makes it an excellent choice for designers seeking a reliable and efficient power switching solution in a wide range of applications, from power supplies and motor control to inverters and DC-DC converters.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1458 $63.0190
125+ $0.9402 $117.5250
195+ $0.9113 $177.7035
265+ $0.8813 $233.5445
340+ $0.8524 $289.8160
455+ $0.7646 $347.8930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,945 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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