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Same model may have multiple batches, images only for reference.
TK12V60W,LVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK12V60W,LVQ

Part No TK12V60W,LVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 11.5A 5DFN
Datasheet
TK12V60W,LVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 600μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (8x8)
Dimension 4-VSFN Exposed Pad
Win Source Part Number 1107404-TK12V60W,LVQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12V60W,LVQ CAD Model

Description

The TK12V60W,LVQ MOSFET is a high-performance N-channel transistor that is designed for use in discrete semiconductor products.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Channel Type: N-channel
  • Maximum Drain-Source Voltage: 600V
  • Maximum Continuous Drain Current: 11.5A @ 25°C
  • Package: 5-DFN (8x8)
  • Feature: low on-resistance and high switching speed
  • Application: high-frequency switching applications
  • Package with: exposed pad
  • Compliance: ROHS compliant
  • Popularity: medium
  • Supply and demand status: balanced

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