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TK16J55D(F)

Part No TK16J55D(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
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Win Source Part Number 1099421-TK16J55D(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TK16J55D(F) CAD Model

Description

The TK16J55D(F) is a power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency switching applications. Power MOSFETs are commonly used in various electronic systems for their ability to handle high voltages and currents with minimal power loss.

Applications:

  • Switching Regulators: Used in DC-DC converters to regulate voltage levels efficiently.
  • Motor Drives: Employed in motor control circuits to provide precise control over motor speed and torque.
  • Power Amplifiers: Utilized in audio and RF amplifiers for signal amplification.
  • Uninterruptible Power Supplies (UPS): Used in UPS systems to provide backup power during power outages.
  • Lighting Ballasts: Employed in electronic ballasts for fluorescent and LED lighting systems.

Features:

  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • High-Speed Switching: Enables rapid switching transitions for high-frequency operation.
  • Avalanche Ruggedness: Designed to withstand transient voltage spikes and overloads.
  • Gate Charge Optimization: Reduces switching losses and improves efficiency.
  • Pb-Free Package: Compliant with RoHS environmental standards.

Benefits:

  • High Efficiency: Reduces power consumption and heat generation.
  • Improved System Performance: Enables faster switching speeds and higher operating frequencies.
  • Enhanced Reliability: Designed for robust performance in demanding applications.
  • Simplified Circuit Design: Offers easy integration into existing circuits.
  • Environmentally Friendly: Compliant with RoHS environmental standards.

Additional Details:

The specific electrical characteristics of the TK16J55D(F), such as drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), on-resistance (RDS(on)), and gate charge (Qg), can be found in the manufacturer's datasheet. The package type, thermal resistance, and operating temperature range are also critical parameters for proper component selection and application. Toshiba Semiconductor and Storage is a well-regarded manufacturer, and the TK16J55D(F) is designed to meet stringent quality and performance requirements. Be sure to consult the official datasheet from Toshiba for the most accurate and up-to-date specifications and application guidelines.

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