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Same model may have multiple batches, images only for reference.
TK31A60W,S4VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK31A60W,S4VX

Part No TK31A60W,S4VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30.8A TO-220SIS
Datasheet
TK31A60W,S4VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.5mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 3000pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 88 mOhm @ 15.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050446-TK31A60W,S4VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK31A60W,S4VX CAD Model

Description

The TK31A60W,S4VX is an N-channel MOSFET with a super junction feature from Toshiba Semiconductor and Storage.

  • Maximum Power Dissipation: 45W
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 30.8A (Ta)
  • Gate-Source Threshold Voltage: 3.7V @ 1.5mA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Input Capacitance: 3000pF @ 300V
  • Package: TO-220SIS
  • Ideal For: Use in discrete semiconductor products

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Quantity Unit Price Ext. Price
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54+ $1.8578 $100.3212
84+ $1.7997 $151.1748
115+ $1.7417 $200.2955
149+ $1.6836 $250.8564
199+ $1.5094 $300.3706
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MOQ: 23 pcs
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