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Same model may have multiple batches, images only for reference.
TK31E60W,S1VX Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK31E60W,S1VX

Part No TK31E60W,S1VX
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 30.8A TO-220
Datasheet
TK31E60W,S1VX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.5mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 3000pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 88 mOhm @ 15.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1050447-TK31E60W,S1VX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK31E60W,S1VX CAD Model

Description

The Toshiba Semiconductor and Storage TK31E60W,S1VX is an N-Channel MOSFET with a super junction feature.

  • Package: TO-220-3
  • Mounting: Through-Hole
  • Maximum Power Dissipation: 230W
  • Operating Temperature Range: Up to 150°C
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Continuous Drain Current @ 25°C: 30.8A
  • Gate-Source Threshold Voltage: 3.7V @ 1.5mA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Rds On: 88 mOhm @ 15.4A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3045 $59.4810
43+ $2.7108 $116.5644
66+ $2.6265 $173.3490
91+ $2.5422 $231.3402
118+ $2.4567 $289.8906
158+ $2.2026 $348.0108
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Availability: 6,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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