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Same model may have multiple batches, images only for reference.
TK31V60W5,LVQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK31V60W5,LVQ

Part No TK31V60W5,LVQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N -CH 600V 30.8A DFN
Datasheet
TK31V60W5,LVQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.5mA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 3000pF @ 300V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 240W (Tc)
Maximum Rds On at Id,Vgs 109 mOhm @ 15.4A, 10V
Temperature Range - Operating 150°C (TA)
Mounting SMD (SMT)
Case / Package 4-DFN-EP (8x8)
Dimension 4-VSFN Exposed Pad
Win Source Part Number 1107433-TK31V60W5,LVQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK31V60W5,LVQ CAD Model

Description

The supply and demand status is balanced.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Component Type: MOSFET
  • Channel Polarity: N-Channel
  • Maximum Power Dissipation: 240W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (25°C): 30.8A (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 1.5mA
  • Maximum Rds On (Id,Vgs): 109 mOhm @ 15.4A, 10V
  • Case/Package: 4-DFN-EP (8x8)
  • Dimension: 4-VSFN Exposed Pad
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 105nC @ 10V
  • Maximum Input Capacitance: 3000pF @ 300V

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28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
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