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Same model may have multiple batches, images only for reference.
TK8A60DA Real Image
Same model may have multiple batches, images only for reference.

TK8A60DA

Part No TK8A60DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A TO-220SIS
Datasheet
TK8A60DA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056660-TK8A60DA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK8A60DA CAD Model

Description

The Toshiba Semiconductor and Storage electronic component is a MOSFET product that is categorized under discrete semiconductor products.

  • Supply and Demand Status: balanced
  • Win Source Part Number: 056660-TK8A60DA
  • Packaging: Tube/Rail
  • Mounting: Through Hole
  • Maximum Power Dissipation: 45W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 70 pcs
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