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Same model may have multiple batches, images only for reference.
TK8A65W,S5X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK8A65W,S5X

Part No TK8A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.8A TO-220SIS / Trans MOSFET N-CH Si 650V 7.8A 3-Pin(3+Tab) TO-220SIS Magazine
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 300μA
Gate Charge (Qg) (Maximum) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 570pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 3.9A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796851-TK8A65W,S5X
Popularity Medium
Supply and Demand Status Limited
Family Name TK8A65W
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK8A65W,S5X CAD Model

Description

The TK8A65W,S5X MOSFET from Toshiba Semiconductor and Storage is a high-performance discrete semiconductor product that is ideal for a wide range of applications.

  • Maximum Drain-Source Voltage: 650V
  • Maximum Continuous Drain Current: 7.8A
  • Low On-Resistance: 650 mOhm @ 3.9A, 10V
  • Gate Charge: 16nC @ 10V
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Maximum Power Dissipation: 30W (Tc)

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