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Same model may have multiple batches, images only for reference.
TK9A55DA(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK9A55DA(STA4,Q,M)

Part No TK9A55DA(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 8.5A TO-220SIS
Datasheet
TK9A55DA(STA4,Q,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1050pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 860 mOhm @ 4.3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 1107473-TK9A55DA(STA4,Q,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK9A55DA(STA4,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage TK9A55DA(STA4,Q,M) is an N-channel MOSFET with a maximum drain-source breakdown voltage of 550V and a maximum power dissipation of 40W (Tc).

  • Drain-Source Breakdown Voltage: 550V
  • Maximum Power Dissipation: 40W (Tc)
  • Maximum Rds On: 860 mOhm @ 4.3A and 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Mounting: Through Hole
  • Case/Package: TO-220SIS
  • Continuous Drain Current: 8.5A (Ta)
  • Operating Temperature: Up to 150°C (TJ)
  • Application: Discrete Semiconductor Products

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