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TK9A90E,S4X

Part No TK9A90E,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 9A TO220SIS  /  N-Channel 900 V 9A (Ta) 50W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVIII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK9A90
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK9A90E,S4X(S,TK9A90ES4X
Standard Package 50
Win Source Part Number 1187395-TK9A90E,S4X
Ultra Librarian 3D Model Ultra Librarian TK9A90E,S4X CAD Model

Description

The TK9A90E,S4X is a high-voltage N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Drain-to-Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 9A @ 25°C
  • On-Resistance (Rds On): 1.3 Ohm @ 4.5A and 10V
  • Power Dissipation: 50W (Tc)
  • Gate Charge (Qg): 46nC @ 10V
  • Input Capacitance (Ciss): 2000pF @ 25V
  • Package: TO-220-3 full pack
  • Mounting: Through-hole
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4672 $58.6880
95+ $1.2039 $114.3705
145+ $1.1663 $169.1135
200+ $1.1286 $225.7200
260+ $1.0910 $283.6600
345+ $0.9782 $337.4790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,940 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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