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Same model may have multiple batches, images only for reference.
TPC8129 Real Image
Same model may have multiple batches, images only for reference.

TPC8129

Part No TPC8129
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 200μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 1650pF @ 10V
Maximum Gate-Source Voltage +20V, -25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 056802-TPC8129
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8129 CAD Model

Description

The TPC8129 is a P-Channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Popularity: medium popularity product
  • Supply and Demand: sufficient supply and demand status
  • Application: This MOSFET is suitable for various applications that require power switching.
  • Caution: Please be cautious while purchasing this product.
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A @ 25°C
  • Rds On @ Id,Vgs: 22 mOhm @ 4.5A and 10V
  • Maximum Gate-Source Voltage: +20V and -25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1443 $50.5050
845+ $0.1184 $100.0480
1,310+ $0.1147 $150.2570
1,805+ $0.1110 $200.3550
2,330+ $0.1073 $250.0090
3,120+ $0.0962 $300.1440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,000 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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