The Toshiba Semiconductor and Storage MOSFET is an N-Channel electronic component with a drain-source breakdown voltage of 100V, continuous drain current of 32A (Tc), and a maximum input capacitance of 2800pF @ 50V.

• GPTDescription: It has a maximum Rds On @ Id,Vgs of 8.8 mOhm @ 16A, 10V and a maximum gate-source voltage of ±20V.
• GPTDescription: The MOSFET has a power dissipation of 1.6W (Ta), 61W (Tc) and a temperature range of 150°C (TJ).
• GPTDescription: It is available in an 8-SOP Advance (5x5) package with 8-PowerVDFN dimensions.
• GPTDescription: The drive voltage for max Rds On and min Rds On is 10V.
• GPTDescription: It is a discrete semiconductor product and is mounted using surface mount technology (SMT). in the open market.
• GPTDescription: The supply and demand status of the product is balanced.