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Same model may have multiple batches, images only for reference.
TPHR6503PL,L1Q
Same model may have multiple batches, images only for reference.

TPHR6503PL,L1Q

Part No TPHR6503PL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 150A 8SOP / N-Channel 30 V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.65mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 15 V
Power Dissipation (Max) 960mW, 170W (Tc)
Temperature Range - Operating 175°C
Mounting Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Case / Package 8-PowerVDFN
Base Product Number TPHR6503
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TPHR6503PLL1QCT,TPHR6503PLL1QDKR,TPHR6503PL,L1Q(M,TPHR6503PLL1QTR
Standard Package 5,000
Win Source Part Number 1325310-TPHR6503PL,L1Q
Ultra Librarian 3D Model Ultra Librarian TPHR6503PL,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is an N-channel transistor with a maximum drain to source voltage of 30 V and a continuous drain current of 150 A @ 25°C.

  • Maximum On-Resistance: 0.65 mOhm @ 50 A and 10 V gate-source voltage
  • Mounting: Surface Mount
  • Package: 8-PowerVDFN
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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