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TPN6R003NL,LQ

Part No TPN6R003NL,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 30V 27A 8TSON-ADV / Trans MOSFET N-CH Si 30V 56A 8-Pin TSON EP Advance T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.3V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1400pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700mW (Ta), 32W (Tc)
Rds On (Maximum) @ Id, Vgs 6 mOhm @ 13.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-TSON Advance (3.3x3.3)
Package 8-PowerVDFN
Win Source Part Number 797858-TPN6R003NL,LQ
Popularity Medium
Supply and Demand Status Limited
Family Name TPN6R003NL
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TPN6R003NL,LQ CAD Model

Description

The TPN6R003NL, LQ is a MOSFET from Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Packaging: 8-PowerVDFN
  • Operating Temperature Range: 150°C (TJ)
  • Technology: MOSFET
  • Current-Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drain Source Voltage: 30V
  • Gate Charge (Qg) (maximum) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 1400pF @ 15V
  • Power Dissipation (maximum): 700mW (Ta), 32W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 6 mOhm @ 13.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6560 $62.2160
25+ $4.6408 $116.0200
39+ $4.4953 $175.3167
54+ $4.3509 $234.9486
69+ $4.2054 $290.1726
92+ $3.7711 $346.9412
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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