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ULN2803APG Toshiba Semiconductor and Storage ULN2803APG Real Image ULN2803APG Real Image1 ULN2803APG Real Image2
ULN2803APG Toshiba Semiconductor and Storage ULN2803APG Real Image ULN2803APG Real Image1 ULN2803APG Real Image2
Same model may have multiple batches, images only for reference.

ULN2803APG

Part No ULN2803APG
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 8NPN DARL 50V 0.5A 18DIP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity 8 NPN Darlington
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min) 1000 @ 350mA, 2V
Maximum Power Dissipation 1.47W
Temperature Range - Operating -40°C to 85°C (TA)
Mounting Through Hole
Case / Package 18-DIP
Win Source Part Number 093768-ULN2803APG
Family Name ULN2803AP
Introduction Date February 14, 2006
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ULN2803APG CAD Model

Description

The ULN2803APG is a NPN Darlington transistor array IC from Toshiba Semiconductor and Storage.

  • Product Type: Discrete semiconductor product
  • Package: 18-DIP
  • Mounting: Through-hole
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 500mA
  • Maximum Power Dissipation: 1.47W
  • Status: Obsolete
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Alternative Part: TBD62083APG

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65+ $1.7517 $113.8605
100+ $1.6969 $169.6900
140+ $1.6421 $229.8940
180+ $1.5874 $285.7320
240+ $1.4232 $341.5680
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