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2N6661JAN02

Part No 2N6661JAN02
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 90V 0.86A TO-205
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 90V
Continuous Drain Current at 25°C 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs 4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-39
Dimension TO-205AD, TO-39-3 Metal Can
Win Source Part Number 131527-2N6661JAN02
Popularity Medium
Supply and Demand Status Limited
Quantity per package 20
Ultra Librarian 3D Model Ultra Librarian 2N6661JAN02 CAD Model

Description

Description

The 2N6661JAN02 is a versatile N-channel MOSFET specifically designed for applications where space savings and high efficiency are critical. This MOSFET is perfect for contractors and engineers seeking reliable and compact solutions for their projects.

Features and Benefits

  • Compact design for space-constrained environments
  • High efficiency reduces heat dissipation
  • Rugged construction for enhanced durability

Applications

  • Power management circuits
  • Telecommunication equipment
  • Industrial automation devices

Additionally, the component is compliant with stringent military specifications, ensuring performance even in extreme scenarios.

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