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BS250KL-TR1-E3 Vishay
Same model may have multiple batches, images only for reference.

BS250KL-TR1-E3

Part No BS250KL-TR1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 270MA TO92-18RM / Trans MOSFET P-CH Si 60V 0.27A 3-Pin TO-92 T/R
Datasheet
BS250KL-TR1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 3nC @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 800mW (Ta)
Rds On (Maximum) @ Id, Vgs 6 Ohm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-92-18RM
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 770398-BS250KL-TR1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name BS250KL
Introduction Date February 12, 2004
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BS250KL-TR1-E3 CAD Model

Description

The Vishay Siliconix BS250KL-TR1-E3 is a P-channel MOSFET transistor designed by Vishay Siliconix.

  • Drain-Source Voltage: 60 V
  • Gate-Source Threshold Voltage: 3 V
  • Maximum Power Dissipation: 800 mW
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Gate-Source Voltage: ±20 V
  • On-Resistance: 6 Ohm @ 500 mA @ 10 Vgs
  • Supply and Demand Status: Limited
  • Status: Obsolete

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