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Same model may have multiple batches, images only for reference.
IRC644PBF Real Image
Same model may have multiple batches, images only for reference.

IRC644PBF

Part No IRC644PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A TO-220-5
Datasheet
IRC644PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 1046381-IRC644PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRC644PBF CAD Model

Description

The Vishay MOSFET is a type of discrete semiconductor product that is designed for current sensing.

  • Application: Current Sensing
  • Polarity: N-Channel
  • Power Dissipation (Max): 125W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting: Through-Hole
  • Package: TO-220-5
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 14A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 8.4A, 10V

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