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IRF520SPBF

Part No IRF520SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.2A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 104337-IRF520SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF520SPBF CAD Model

Description

The Vishay IRF520SPBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 9.2A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.2A @ 25°C
  • Maximum Rds On: 270 mOhm @ 5.5A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 360pF @ 25V
  • Technology: MOSFET
  • Mounting: D2PAK package
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Power Dissipation: 3.7W (Ta), 60W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Usage: Widely used in various electronic applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6763 $50.2890
75+ $1.3755 $103.1625
115+ $1.3325 $153.2375
160+ $1.2895 $206.3200
205+ $1.2465 $255.5325
270+ $1.1176 $301.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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