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Same model may have multiple batches, images only for reference.
IRF710SPBF
Same model may have multiple batches, images only for reference.

IRF710SPBF

Part No IRF710SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 2A D2PAK
Datasheet
IRF710SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 36W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017486-IRF710SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF710SPBF CAD Model

Description

The IRF710SPBF is an N-channel MOSFET transistor manufactured by Others. It is a part of the Discrete Semiconductor Products category.

  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 2A
  • Power Dissipation: 3.1W (Ta) and 36W (Tc)
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Supply and Demand Status: Currently limited

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