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IRF840ALPBF

Part No IRF840ALPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1018pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069416-IRF840ALPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF840ALPBF CAD Model

Description

The Vishay 069416-IRF840ALPBF MOSFET is an N-channel power MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 8Amps.

  • Type: through-hole
  • Mounting: tube/rail
  • Dimension: TO-262-3 long leads, I2Pak, TO-262AA
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 850 mOhm @ 4.8A, 10V
  • Gate Charge: 38nC @ 10V
  • Maximum Gate-Source Voltage: ±30V
  • Input Capacitance: 1018pF @ 25V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99 compliant
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3248 $59.6160
110+ $1.0871 $119.5810
165+ $1.0531 $173.7615
230+ $1.0192 $234.4160
295+ $0.9851 $290.6045
395+ $0.8833 $348.9035
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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