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IRF9Z34STRRPBF

Part No IRF9Z34STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 18A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1100pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 60238-IRF9Z34STRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9Z34STRRPBF CAD Model

Description

The Vishay MOSFET, IRF9Z34STRRPBF, is a P-channel component that has a maximum drain-source breakdown voltage of 60V and a continuous drain current of 18A (Tc) at 25°C.

  • Power Dissipation: 3.7W (Ta) and 88W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 34nC @ 10V
  • Mounting: SMD (SMT)
  • Packaging: D2PAK
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8972 $66.4020
75+ $1.5567 $116.7525
115+ $1.5081 $173.4315
160+ $1.4595 $233.5200
205+ $1.4109 $289.2345
275+ $1.2649 $347.8475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,360 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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