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IRFI520GPBF

Part No IRFI520GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 7.2A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 360pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 4.3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 135000-IRFI520GPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI520GPBF CAD Model

Description

The IRFI520GPBF is a high power N-channel MOSFET transistor manufactured by Vishay.

  • Maximum Power Dissipation: 37W
  • Continuous Drain Current: 7.2A @ 25°C
  • Market Status: medium popularity with a limited supply and demand status
  • Common Usage: commonly used in power supplies, motor control, and lighting applications.
  • Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 360pF @ 25V
  • Maximum On-Resistance: 270 mOhm @ 4.3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5713 $59.9865
250+ $0.4689 $117.2250
385+ $0.4541 $174.8285
530+ $0.4395 $232.9350
680+ $0.4248 $288.8640
910+ $0.3809 $346.6190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,600 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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