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Same model may have multiple batches, images only for reference.
IRFI630GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI630GPBF

Part No IRFI630GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5.9A TO220FP
Datasheet
IRFI630GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 205366-IRFI630GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI630GPBF CAD Model

Description

The Vishay 205366-IRFI630GPBF is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 5.9A (Tc).

  • Maximum Rds On: 400 mOhm @ 3.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 800pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Usage: reliable and efficient solution for various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3026 $59.0070
470+ $0.2483 $116.7010
720+ $0.2414 $173.8080
995+ $0.2333 $232.1335
1,285+ $0.2252 $289.3820
1,715+ $0.2021 $346.6015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,030 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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