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Same model may have multiple batches, images only for reference.
IRFPE30PBF Real Image
Same model may have multiple batches, images only for reference.

IRFPE30PBF

Part No IRFPE30PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4.1A TO-247AC
Datasheet
IRFPE30PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 124519-IRFPE30PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPE30PBF CAD Model

Description

The Vishay MOSFET electronic component with Win Source Part Number 124519-IRFPE30PBF is a high-quality product that is commonly used in various applications.

  • Category: discrete semiconductor products
  • Mounting: Through-hole
  • Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 4.1A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5478 $54.1730
70+ $1.4499 $101.4930
110+ $1.4009 $154.0990
155+ $1.3029 $201.9495
200+ $1.2540 $250.8000
250+ $1.2050 $301.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,260 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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