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IRFR220PBF

Part No IRFR220PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 4.8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069534-IRFR220PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR220PBF CAD Model

Description

The Vishay IRFR220PBF is an N-channel MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 4.8A (Tc) @ 25°C.

  • Power Dissipation: 2.5W (Ta) and 42W (Tc)
  • Drive Voltage: 10V
  • Maximum Rds On: 800 mOhm @ 2.9A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 260pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5765 $55.1775
80+ $1.2935 $103.4800
120+ $1.2531 $150.3720
165+ $1.2127 $200.0955
215+ $1.1723 $252.0445
290+ $1.0510 $304.7900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,245 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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