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IRFU320PBF

Part No IRFU320PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 3.1A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 017722-IRFU320PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFU320PBF CAD Model

Description

The IFRU320PBF is a MOSFET technology-based product that is used in discrete semiconductor products.

  • Manufacturer: Vishay
  • Packaging: Tube/rail
  • Maximum Power Dissipation: 2.5W (Ta) and 42W (Tc)
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 3.1A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Maximum Rds on: 1.8 Ohm @ 1.9A, 10V
  • Supply and Demand Status: Balanced
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-251-3 short leads, IPak, TO-251AA

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4098 $51.2250
300+ $0.3362 $100.8600
465+ $0.3257 $151.4505
635+ $0.3152 $200.1520
825+ $0.3047 $251.3775
1,100+ $0.2732 $300.5200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,990 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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