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Same model may have multiple batches, images only for reference.
IRL520STRR Real Image
Same model may have multiple batches, images only for reference.

IRL520STRR

Part No IRL520STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.2A D2PAK
Datasheet
IRL520STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 5.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047505-IRL520STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL520STRR CAD Model

Description

The Vishay IRL520STRR is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 9.2A @ 25°C.

  • Maximum Rds On: 270 mOhm @ 5.5A and 5V gate-source voltage
  • Maximum Gate-Source Voltage: ±10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Input Capacitance: 490pF @ 25V
  • Maximum Gate Charge: 12nC @ 5V
  • Power Dissipation: 3.7W (Ta) and 60W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Use: Discrete semiconductor products

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