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Same model may have multiple batches, images only for reference.
IRLI640GPBF Real Image
Same model may have multiple batches, images only for reference.

IRLI640GPBF

Part No IRLI640GPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.9A TO220FP
Datasheet
IRLI640GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 5.9A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 125383-IRLI640GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLI640GPBF CAD Model

Description

The Vishay IRLI640GPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 40W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9.9A (Tc) @ 25°C
  • Maximum Rds On: 180 mOhm @ 5.9A, 5V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 66nC @ 10V
  • Case/Package: TO-220-3
  • Dimension: TO-220-3 Full Pack
  • Temperature Range: -55°C to 150°C (TJ)

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