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Same model may have multiple batches, images only for reference.
SI1012X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1012X-T1-GE3

Part No SI1012X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 500MA SC89-3
Datasheet
SI1012X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-3
Dimension SC-89, SOT-490
Win Source Part Number 028323-SI1012X-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1012X-T1-GE3 CAD Model

Description

The Vishay SI1012X-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 500mA @ 25°C.

  • Maximum On-Resistance: 700 mOhm @ 600mA and 4.5V gate-source voltage
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2867 $50.1725
425+ $0.2353 $100.0025
660+ $0.2279 $150.4140
910+ $0.2206 $200.7460
1,175+ $0.2132 $250.5100
1,570+ $0.1912 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,770 pieces
MOQ: 175 pcs
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